Aluminum nitride AlN ceramic substrate

Quick, reliable and consecutive heat dissipation for high-power modules is a must norm, otherwise, the calculated heat will virtually be harmful to your critical devices. Aluminum nitride (AlN) ceramic substrates has taken on the role for heat dissipation very well. Let's see why AlN ceramic substrate are chosen to be ideal material for cooling in the manufacturers of high-power devices.

Prime features for AlN ceramic substrate

1. Superb high thermal conductivity, it's 5~8.5 times more than high purity alumina ceramic which is up to 170 W/k.m ~ 230 W/k.m, That's to say, the released heat could be transferred out from chips quickly.

2. Very similar thermal expansion coefficient to silicon (Si) and gallium nitride (GaN), It's 4 to 6×10^-6K^(-1）,It means the aluminum nitride ceramic substrates are free of thermal expansion issues when they work work high-power chips.

3. High dielectric strength, such as the dielectric breakdown voltage higher than 15KV/mm,  the volume resistivity greater than 1*10^14 ohm.cm and the dielectric constant is around 8.5 under 1MHz.

4. Higher mechanical strength than 96% alumina ceramic substrate, it's up to 450 MPa with 3-point bending test.

5. Excellent corrosion resistance.  In regular service circustances, aluminum nitride ceramic substrate will not react with acids and alkalis.

6. Free of toxicity and meet REACH, RoSH regulations completely. It doesn't like BeO ceramic material.  At preparation stage of powder, BeO has highly toxic issue.

Typical application of aluminum nitride substrate